13įigure 2: Ioff current when the channel is off (pMOS)Ģ. In that situation again, a nArange current called leakage current may flow between source and drai. In contrats, the 1 on the gate should link the drain to the source, via a resistive path and enable mA range current to flow between drain and source.įigure 1: Ioff current when the channel is off (nMOS)įor the pMOS device, the 1 on the gate should leave the drain floating. Howevere, a leakage current enables nA range current to flow although the gate voltage is 0. ![]() No current is expected to flow between drain and source. The 0 on the gate should leave the drain floating. The expected behavior of the n-channel MOS device is summarized in figure 1. Leakage Current in MOS devices The leakage current is the current that flows between Drain and Source when no channel is present. Finally, a case study serves as an illustration of the low-leakage MOS device benefits versus high-speed MOS devices.ġ. ![]() The recent trends in leakage current reduction are also recalled for 45-nm technology. Leakage Power Consumption Evaluation in Microwind31 Etienne SICARD Professor INSA-Dgei, 135 Av de Rangueil 31077 Toulouse – France email: This paper describes the leakage current effect appearing in MOS devices, presents low-leakage device options, and gives a rapid overview of the current leakage modeling in LEVEL1, LEVE元 and BSIM4.
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